 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Product Description Stanford Microdevices' SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-3.5 GHz. The SLN-286 needs only 2 DC-Blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0 dB noise figure. This 50 Ohm LNA requires only a single supply voltage and draws only 5mA. For broadband applications, it may be biased at 4mA with minimal effect on noise figure and gain. The SLN-286 is available in tape and reel at 1000, 3000 and 5000 devices per reel. SLN-286 DC-3.5 GHz, 3Volt 50 Ohm LNA MMIC Amplifier Noise Figure vs. Frequency 2.5 4 mA 2 Product Features * Patented, Reliable GaAs HBT Technology * Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz * High Associated Gain: 27 dB Typ. at 2.0 GHz * True 50 Ohm MMIC : No External Matching Required * Low Current Draw : Only 5 mA at 3V Low Noise MMICs dB 1.5 5 mA * Low Cost Surface Mount Plastic Package 1 0.1 0.5 1 1.5 2 2.5 3 3.5 GHz Applications * AMPS, PCS, DECT, Handsets * Tri-Band & Broadband Receivers Electrical Specifications at Ta = 25C S ym bol P a r a m e te r s : T e s t C o n d i tio n s U n its M in . Ty p . M ax. NF 50 Ohm S 21 VSW R NF 50 Ohm S 21 VSW R N o is e F ig u r e in 5 0 O h m s : V d s = 3 .0 V , Id s = 5 m A 5 0 O h m G a in : V d s = 3 .0 V , Id s = 5 m A 5 0 O h m M a t c h ( I n p u t a n d O u t p u t ): V d s = 3 .0 V , Id s = 5 m A N o is e F ig u r e in 5 0 O h m s : V d s = 2 .8 V , Id s = 4 m A 5 0 O h m G a in : V d s = 2 .8 V , Id s = 4 m A 5 0 O h m M a t c h ( I n p u t a n d O u t p u t ): V d s = 2 .8 V , Id s = 4 m A O u t p u t P o w e r a t 1 d B C o m p r e s s io n : f = D C -3 .5 G H z T h ir d O r d e r I n t e r c e p t P o in t: f = D C -3 .5 G H z f = D C -1 .5 G H z f = 1 . 5 - 3 .5 G H z f = D C -1 .5 G H z f = 1 . 5 - 3 .5 G H z f = D C -1 .5 G H z f = 1 . 5 - 3 .5 G H z f = D C -1 .5 G H z f = 1 . 5 - 3 .5 G H z f = D C -1 .5 G H z f = 1 . 5 - 3 .5 G H z f = D C -1 .5 G H z f = 1 . 5 - 3 .5 G H z V d = 3 .0 V , Id = 5 m A V d = 2 .8 V , Id = 4 m A V d = 3 .0 V , Id = 5 m A V d = 2 .8 V , Id = 4 m A dB dB dB 22 1 .7 2 .2 25 23 1 .8 :1 2 .5 :1 1 .9 2 .4 19 22 20 1 .4 :1 2 .0 :1 -1 2 -1 4 +3 +1 2 .1 dB dB dB 2 .3 dBm dBm dBm P 1dB IP 3 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 4-21 SLN-286 DC-3.5 GHz LNA MMIC Amplifier Typical Performance at 25 C (Vds = 3.0V, Ids = 5mA) |S11| vs. Frequency 0 -5 30 5 mA 25 |S21| vs. Frequency dB -10 -15 -20 0.1 0.5 1 1.5 2 2.5 3 3.5 dB 20 4 mA 15 10 0.1 0.5 1 1.5 2 2.5 3 3.5 GHz GHz |S12| vs. Frequency 0 -10 0 -5 -10 |S22| vs. Frequency dB -20 -30 -40 0.1 0.5 1 1.5 2 2.5 3 3.5 dB -15 -20 -25 -30 0.1 0.5 1 1.5 2 2.5 3 3.5 Low Noise MMICs Freq G H z .1 0 0 .2 5 0 .5 0 0 1 .0 0 1 .5 0 2 .0 0 2 .5 0 3 .0 0 3 .5 0 4 .0 0 GHz GHz Power Out & TOIP vs. Frequency 12 8 4 0 TOIP dB -4 -8 -12 -16 -20 Pout 0.1 0.5 1 1.5 2 2.5 3 3.5 GHz Typical S-Parameters Vds = 3.0V, Ids = 5mA |S 11 | S 11 A n g |S 2 1 | S21 A ng |S 1 2 | S12 A ng |S 2 2 | S22 A ng 0 .0 7 4 0 .0 8 3 0 .0 7 9 0 .1 7 8 0 .2 9 0 0 .3 7 2 0 .4 2 7 0 .4 3 7 0 .4 1 4 0 .3 9 3 -1 2 4 -11 3 -9 8 -1 6 8 89 22 -4 7 -11 7 180 126 11 .0 2 11 .1 2 11 .4 5 1 2 .4 9 1 2 .6 8 1 2 .9 1 11 .0 2 9 .2 2 7 .4 5 5 .5 3 -4 -8 -4 7 -1 0 0 -1 6 0 140 73 18 -3 8 -8 4 .0 3 9 .0 3 3 .0 3 2 .0 3 5 .0 3 3 .0 3 7 .0 4 0 .0 4 5 .0 5 1 .0 5 3 13 9 -1 7 -3 4 -5 1 80 -1 0 3 -1 3 4 -1 5 8 177 .2 0 1 .2 1 5 .2 1 0 .1 5 3 .0 3 8 .1 3 3 .2 5 5 .3 5 0 .3 6 5 .3 7 7 -5 0 -2 6 -4 8 -1 0 9 -1 7 5 -6 0 -1 4 5 141 -7 9 23 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 4-22 SLN-286 DC-3.5 GHz LNA MMIC Amplifier Absolute Maximum Ratings P a r a m ete r A b s o lu te M a xim u m Part Number Ordering Information Part Number Devices Per Reel Reel Size SLN-286-TR1 D e vic e C urre nt Po w e r D issipa tion R F In p ut Po w er Ju n ction Te m p e ra ture O p e ra tin g Te m p e ra tu re Sto ra g e Te m pe ra tu re 50mA 4 4 0m W 1 0 0m W +2 0 0 C -4 5 C to +8 5 C -6 5 C to +1 5 0 C SLN-286-TR2 SLN-286-TR3 1000 3000 5000 7" 13" 13" Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. Supply Voltage(Vs) Rbias (Ohms) Recom mended Bias Resistor Values 3.3V 60 5V 400 7.5V 900 9V 1200 12V 1800 15V 2400 20V 3400 3.3 Device Pinout Low Noise MMICs Pin 1 2 Function RF Input Ground RF Output and Bias Ground 3.0 3 4 Typical Biasing Configuration Device Outline 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 4-23 |
Price & Availability of SLN-286
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |